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1. 发明授权

US07525148B2 Nonvolatile memory device 失效
标题翻译：非易失性存储器件
公开(公告)号：US07525148B2
公开(公告)日：2009-04-28
申请号：US11228696
申请日：2005-09-16
申请人： Young-Joon Kim , Dae-Woong Kim , Min Kim
发明人： Young-Joon Kim , Dae-Woong Kim , Min Kim
IPC分类号： H01L29/76
CPC分类号： H01L27/115 , H01L27/11521
摘要： A nonvolatile memory device and a method of manufacturing the same are provided. An insulation layer having a high etching rate as compared with a pad oxide layer is formed as a buffer layer between a first STI film formed as a lower part of semiconductor substrate and a second STI film formed as an upper part of the semiconductor substrate, to obtain a pillar CD for an SAP structure. The buffer layer is etched more speedily in comparison with the pad oxide layer in a procedure of etching the pad oxide layer, thus ensuring a sufficient pillar CD without an excessive wet etch-back. Accordingly, a defect occurrence such as a grooving or seam can be prevented in realizing the SAP structure, and a tunnel oxide layer can be formed with uniform thickness.
摘要翻译：提供了一种非易失性存储器件及其制造方法。形成与衬垫氧化物层相比具有高蚀刻速率的绝缘层作为形成为半导体衬底的下部的第一STI膜和形成为半导体衬底的上部的第二STI膜之间的缓冲层形成为获得SAP结构的支柱CD。在蚀刻衬垫氧化物层的过程中，与衬垫氧化物层相比，缓冲层被更快速地蚀刻，从而确保了足够的支柱CD而没有过多的湿回蚀。因此，在实现SAP结构时，可以防止诸如切槽或接缝的缺陷发生，并且可以形成具有均匀厚度的隧道氧化物层。

2. 发明申请

US20090089647A1 DIGITAL DATA CODING AND RECORDING APPARATUS, AND METHOD OF USING THE SAME 失效
标题翻译：数字数据编码和记录装置及其使用方法
公开(公告)号：US20090089647A1
公开(公告)日：2009-04-02
申请号：US12325588
申请日：2008-12-01
申请人： Dae-Woong Kim , Soo-Wong Lee , Hyun-Woong Lee
发明人： Dae-Woong Kim , Soo-Wong Lee , Hyun-Woong Lee
IPC分类号： G11C29/04 , G06F11/10
CPC分类号： G11B20/10 , G11B20/10527 , G11B20/1426 , G11B27/11 , G11B2020/1062 , G11B2220/65
摘要： A data coding apparatus and method for recording digital data on a storage device are provided, where the recording apparatus reduces the number of times that memory is accessed by storing only additional information and parity information when ECC encoded data are temporarily stored in an external memory, and performs data coding without any clock loss by scrambling only a specific field on-the-fly when the data stored in the external memory are read.
摘要翻译：提供一种用于在存储装置上记录数字数据的数据编码装置和方法，其中当ECC编码数据临时存储在外部存储器中时，记录装置通过仅存储附加信息和奇偶校验信息来减少访问存储器的次数，并且当存储在外部存储器中的数据被读取时，通过仅对特定字段进行加扰来执行没有任何时钟损失的数据编码。

3. 发明申请

US20080102557A1 Method of forming an isolation layer and method of manufacturing an image device using the same 审中-公开
标题翻译：形成隔离层的方法和使用其制造图像装置的方法
公开(公告)号：US20080102557A1
公开(公告)日：2008-05-01
申请号：US11976660
申请日：2007-10-26
申请人： Dae-Woong Kim , Mi-Young Lee
发明人： Dae-Woong Kim , Mi-Young Lee
IPC分类号： H01L31/18 , H01L21/762
CPC分类号： H01L27/1463 , H01L21/76224 , H01L27/14683
摘要： A method of forming an isolation layer includes forming mask pattern structure on a substrate to partially expose the substrate, etching the substrate using the mask pattern as an etching mask to form a trench, forming an impurity diffusion region at an inner face of the trench, and filling the trench with the isolation layer. A method of manufacturing an image device includes the method of forming an isolation layer, and at least additionally forming unit pixels including a photo diode and transistors on an active region defined by the isolation layer.
摘要翻译：形成隔离层的方法包括在衬底上形成掩模图案结构以部分地暴露衬底，使用掩模图案蚀刻衬底作为蚀刻掩模以形成沟槽，在沟槽的内表面形成杂质扩散区，并用隔离层填充沟槽。制造图像装置的方法包括形成隔离层的方法，并且至少另外在由隔离层限定的有源区域上形成包括光电二极管和晶体管的单位像素。

4. 发明申请

US20050019723A1 Fixing pin for model teeth die 审中-公开
标题翻译：型牙模具固定销
公开(公告)号：US20050019723A1
公开(公告)日：2005-01-27
申请号：US10658672
申请日：2003-09-09
申请人： Dae-Woong Kim , Won-Chul Lee
发明人： Dae-Woong Kim , Won-Chul Lee
IPC分类号： A61C9/00 , A61C13/34 , A61C19/00
CPC分类号： A61C9/002
摘要： Disclosed is a fixing pin for a model teeth die connecting a model teeth die to a model base. The fixing pin includes a model base inserting portion having a side expansion portion and being inserted into the model base, and a die inserting portion being fixedly inserted into the model teeth die. The model base inserting portion is a taper type, and the side expansion portion is a streamline and expands from one side of the model base inserting portion. Further, the die inserting portion is formed on the upper surface of the model base inserting portion neighboring to the side expansion portion. Thereby, when the model teeth die is connected to the model base, it is prevented from being rotated. Further, the fixing pin may be easily manufactured.
摘要翻译：公开了一种用于将型号牙模与模型基座连接的模型牙齿模具的固定销。固定销包括具有侧部膨胀部分并插入到模型基座中的模型基部插入部分，并且模具插入部分固定地插入到模型牙齿模具中。模型基础插入部分是锥形的，侧面扩张部分是流线并从模型基础插入部分的一侧膨胀。此外，模具插入部分形成在与侧面扩张部分相邻的模型基部插入部分的上表面上。因此，当模型齿模连接到模型基座时，防止其旋转。此外，可以容易地制造固定销。

5. 发明授权

US08281225B2 Digital data coding and recording apparatus, and method of using the same 失效
标题翻译：数字数据编码和记录装置及其使用方法
公开(公告)号：US08281225B2
公开(公告)日：2012-10-02
申请号：US12325588
申请日：2008-12-01
申请人： Dae-Woong Kim , Soo-Wong Lee , Hyun-Woong Lee
发明人： Dae-Woong Kim , Soo-Wong Lee , Hyun-Woong Lee
IPC分类号： G11C29/00 , H03M13/00
CPC分类号： G11B20/10 , G11B20/10527 , G11B20/1426 , G11B27/11 , G11B2020/1062 , G11B2220/65
摘要： A data coding apparatus and method for recording digital data on a storage device are provided, where the recording apparatus reduces the number of times that memory is accessed by storing only additional information and parity information when ECC encoded data are temporarily stored in an external memory, and performs data coding without any clock loss by scrambling only a specific field on-the-fly when the data stored in the external memory are read.
摘要翻译：提供一种用于在存储装置上记录数字数据的数据编码装置和方法，其中当ECC编码数据临时存储在外部存储器中时，记录装置通过仅存储附加信息和奇偶校验信息来减少访问存储器的次数，并且当存储在外部存储器中的数据被读取时，通过仅对特定字段进行加扰来执行没有任何时钟损失的数据编码。

6. 发明授权

US07498233B2 Method of forming an insulation layer structure having a concave surface and method of manufacturing a memory device using the same 有权
标题翻译：形成具有凹面的绝缘层结构的方法和使用其形成存储器件的方法
公开(公告)号：US07498233B2
公开(公告)日：2009-03-03
申请号：US11381065
申请日：2006-05-01
申请人： Min Kim , Dae-Woong Kim
发明人： Min Kim , Dae-Woong Kim
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L27/11521 , H01L27/11526 , H01L27/11531
摘要： A method of forming an isolation layer structure for a semiconductor device includes forming a first structure on a substrate, the first structure including an insulation layer pattern having a sacrificial pattern therein, the sacrificial pattern having an etching rate that is different from the insulation layer pattern, partially removing the insulation layer pattern until the sacrificial pattern is exposed to form a second structure, partially removing the sacrificial pattern from the insulation layer pattern to form a third structure having a recessed portion at a central portion thereof, and removing an upper portion of the third structure such that a top surface of the third structure is concave with respect to a top surface of the substrate.
摘要翻译：一种形成用于半导体器件的隔离层结构的方法包括在衬底上形成第一结构，所述第一结构包括其中具有牺牲图案的绝缘层图案，所述牺牲图案具有不同于绝缘层图案的蚀刻速率部分地去除绝缘层图案，直到牺牲图案暴露以形成第二结构，从绝缘层图案部分地去除牺牲图案，以形成在其中心部分具有凹陷部分的第三结构，并且去除所述第三结构使得所述第三结构的顶表面相对于所述基板的顶表面是凹的。

7. 发明申请

US20070284692A1 DEVICE ISOLATION STRUCTURE INCORPORATED IN SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：在半导体器件中并入的器件隔离结构及其形成方法
公开(公告)号：US20070284692A1
公开(公告)日：2007-12-13
申请号：US11761949
申请日：2007-06-12
申请人： Yong-Woo Lee , Dae-Woong Kim , Yong-Hwan Ryu
发明人： Yong-Woo Lee , Dae-Woong Kim , Yong-Hwan Ryu
IPC分类号： H01L29/00
CPC分类号： H01L21/76232 , H01L27/1463
摘要： The structure of the present invention comprises a semiconductor substrate and a trench region formed on the semiconductor substrate. The trench region includes an extended funnel portion in the vicinity of the semiconductor substrate surface. A device isolation layer is formed at the trench region. The device isolation layer includes a void formed at a lower level than the funnel portion. The sidewalls of the hard mask pattern and the internal walls of the trench region are etched to form a funnel portion with an extended trench region at the vicinity of the semiconductor substrate surface. Accordingly, the void in the trench region does not extend above a surface of the semiconductor substrate.
摘要翻译：本发明的结构包括半导体衬底和形成在半导体衬底上的沟槽区域。沟槽区域包括在半导体衬底表面附近的延伸漏斗部分。在沟槽区域形成器件隔离层。器件隔离层包括形成在比漏斗部分低的水平处的空隙。蚀刻硬掩模图案的侧壁和沟槽区域的内壁，以在半导体衬底表面附近形成具有延伸沟槽区域的漏斗部分。因此，沟槽区域中的空隙不会延伸到半导体衬底的表面之上。

8. 发明申请

US20060113610A1 Nonvolatile memory device and method for manufacturing the same 失效
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20060113610A1
公开(公告)日：2006-06-01
申请号：US11228696
申请日：2005-09-16
申请人： Young-Joon Kim , Dae-Woong Kim , Min Kim
发明人： Young-Joon Kim , Dae-Woong Kim , Min Kim
IPC分类号： H01L29/76
CPC分类号： H01L27/115 , H01L27/11521
摘要： A nonvolatile memory device and a method of manufacturing the same are provided. An insulation layer having a high etching rate as compared with a pad oxide layer is formed as a buffer layer between a first STI film formed as a lower part of semiconductor substrate and a second STI film formed as an upper part of the semiconductor substrate, to obtain a pillar CD for an SAP structure. The buffer layer is etched more speedily in comparison with the pad oxide layer in a procedure of etching the pad oxide layer, thus ensuring a sufficient pillar CD without an excessive wet etch-back. Accordingly, a defect occurrence such as a grooving or seam can be prevented in realizing the SAP structure, and a tunnel oxide layer can be formed with uniform thickness.
摘要翻译：提供了一种非易失性存储器件及其制造方法。形成与衬垫氧化物层相比具有高蚀刻速率的绝缘层作为形成为半导体衬底的下部的第一STI膜和形成为半导体衬底的上部的第二STI膜之间的缓冲层形成为获得SAP结构的支柱CD。在蚀刻衬垫氧化物层的过程中，与衬垫氧化物层相比，缓冲层被更快速地蚀刻，从而确保了足够的支柱CD而没有过多的湿回蚀。因此，在实现SAP结构时，可以防止诸如切槽或接缝的缺陷发生，并且可以形成具有均匀厚度的隧道氧化物层。

9. 发明授权

US07853662B2 Network control system for home appliances 失效
标题翻译：家用电器网络控制系统
公开(公告)号：US07853662B2
公开(公告)日：2010-12-14
申请号：US10478816
申请日：2001-07-05
申请人： Sam-Chul Ha , Seung-Myun Baek , Koon-Seok Lee , Jeong-Hyun Lim , Hwan-Jong Choi , Ja-In Koo , Dae-Woong Kim , Sung-Hwan Kang
发明人： Sam-Chul Ha , Seung-Myun Baek , Koon-Seok Lee , Jeong-Hyun Lim , Hwan-Jong Choi , Ja-In Koo , Dae-Woong Kim , Sung-Hwan Kang
IPC分类号： G06F15/16 , G06F15/173
CPC分类号： H04L29/12254 , H04B3/542 , H04B2203/5408 , H04B2203/5425 , H04B2203/5445 , H04B2203/545 , H04B2203/5458 , H04L12/2803 , H04L12/2807 , H04L12/2818 , H04L12/282 , H04L12/403 , H04L29/06 , H04L41/00 , H04L41/028 , H04L41/0681 , H04L43/06 , H04L43/0811 , H04L43/0817 , H04L61/2038 , H04L67/12 , H04L69/22 , H04L69/329 , H04L2012/2841 , H04L2012/2843 , H04L2012/2845 , H04L2012/2849 , H04L2012/285 , H04N21/4131 , H04N21/43615 , H04N21/43632 , Y04S40/166 , Y04S40/168
摘要： Disclosed is a network control system for home appliances that satisfies the characteristics of low-cost and high-efficiency with respect to currently used appliances adopting a low-performance microcomputer. The system is constructed to define a master/slave type communication structure with respect to the respective appliances; construct a network by connecting the appliances through the serial communication function; and enable the appliances to communicate with one another if a predetermined communication event is produced. According to the system, an optimized network for the home appliances can be implemented, and operation states of the respective appliances can be displayed through the co-operation among the appliances, thereby maximizing the user convenience.
摘要翻译：公开了一种家用电器的网络控制系统，其满足采用低性能微型计算机的当前使用的电器的低成本和高效率的特性。该系统构造成相对于各个设备定义主/从类型通信结构; 通过串行通信功能连接设备构建网络; 并且如果产生预定的通信事件，则使设备能够彼此通信。根据该系统，可以实现家用电器的优化网络，并且可以通过设备之间的协作来显示各个设备的操作状态，从而最大化用户便利性。

10. 发明申请

US20090150749A1 DIGITAL DATA CODING AND RECORDING APPARATUS, AND METHOD OF USING THE SAME 审中-公开
标题翻译：数字数据编码和记录装置及其使用方法
公开(公告)号：US20090150749A1
公开(公告)日：2009-06-11
申请号：US12325606
申请日：2008-12-01
申请人： Dae-Woong Kim , Soo-Wong Lee , Hyun-Woong Lee
发明人： Dae-Woong Kim , Soo-Wong Lee , Hyun-Woong Lee
IPC分类号： H03M13/05 , G06F11/10
CPC分类号： G11B20/10 , G11B20/10527 , G11B20/1426 , G11B27/11 , G11B2020/1062 , G11B2220/65
摘要： A method of preparing data for a storage device includes writing unencoded main data to a memory buffer; reading the unencoded main data from the memory buffer; encoding the read main data; scrambling the encoded main data to provide address and parity information; writing the address and parity information, but not the encoded main data, to the memory buffer; reading the address and parity information and the unencoded main data from the memory buffer; and scrambling the unencoded main data.
摘要翻译：一种为存储装置准备数据的方法包括将未编码的主数据写入存储器缓冲器; 从内存缓冲区读取未编码的主数据; 编码读主数据; 加扰编码的主数据以提供地址和奇偶校验信息; 将地址和奇偶校验信息，而不是编码的主数据写入存储器缓冲器; 从存储器缓冲器读取地址和奇偶校验信息以及未经编码的主数据; 并扰乱未编码的主要数据。

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